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_a0-306-44048-2 _bEncadernado |
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| 090 | _a287144 | ||
| 100 | _a20100326d1991 k y0pory5003 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 200 | 1 |
_aResonant tunneling in semiconductors _ephysics and applications _fed. L. L. Chang, E. E. Mendez and C. Tejedor |
|
| 210 |
_aNew York _cPlenum Press _dcop. 1991 |
||
| 215 |
_aXIII, 537 p. _cil. _d25 cm |
||
| 225 | 2 |
_aNATO ASI. _iSérie B _ePhysics _v277 |
|
| 675 |
_a538.9 _vint _zeng |
||
| 702 | 1 |
_9242875 _aChang, _bLeroy L. _4340 |
|
| 702 | 1 |
_9242876 _aMendez, _bE. E. _4340 |
|
| 702 | 1 |
_9242877 _aTejedor, _bC. _4340 |
|
| 710 | 1 | 2 |
_aNATO Advanced Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, _eSan Lorenzo del Escorial, Spain, _f1990 |
| 801 | 0 |
_aPT _bUMSD _c20100326 _gRPC |
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| 942 |
_cLIVRO _n0 |
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